AST 2900

Mattson Technology’s 2900 addresses 0.25-0.13μ RTP applications at the best cost of ownership in the industry. The 2900 incorporates the advanced capabilities of Mattson’s 3000 RTP tool with the field-proven capabilities of the company’s 2800 system. The 2900 provides excellent uniformity and process reliability for yield enhancing rapid thermal processing.

Process Applications

• Implant Anneal
• Densification and Reflow (BPSG, PSG)
• Oxidations: Sacrifical, screen
• Shallow Trench Isolation
• Metal Silicides (TiSix, CoSix)
• Barrier Anneal (TiN)

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Benefits

• < 0.8% (1σ) within wafer uniformity for most processes
• Repeatability < 4°C (3σ) all wafers added non-uniformity for most anneal and oxidation processes
• Large process temperature range 450°C - 1250°C for multiple RTP applications
• Low temperature processing capability for advanced silicide formation with precisely controlled oxygen free ambient
• Advanced temperature measurement and control with longterm calibration stability
• Wide range of backside emissivity (0.2 to 0.95)
• Limited gas concentration processing in defined ppm range
• Low consumable cost for long life lamps

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Features

• Dual-side heating concept for minimum wafer stress
• 38 individually controllable lamps for tight uniformity control during ramps and steady temperature
• Absolute Temperature Pyrometry with in-situ emissivity measurement for ACTIVE compensation of wafer backside
• Unique design of reactor quartz-ware and contactless edge guard ring excluding edge effects and allowing slip free processing
• Graphic user interface (GUI) with graphic expansion of all process parameters in real time
• Modular design with swivel frame for easy installation and maintenance
• Dual-arm robot for maximum throughput (92 wafers/hour mechanical limit)
• Toxic gas processing capability

Ring tilt during robot handling

2900 Footprint